Microchip Expands SPI Flash Memory Portfolio With Three New Low-Power Devices

New Flash Devices Include Extended Operating Voltage Range From 2.3 to 3.6V

Tags / Keywords: SST25PF020B, SST25PF040B, SST25PF080B, Serial Flash, SPI Flash, Flash, NOR Flash, SuperFlash, Memory, Non-volatile

CHANDLER, Ariz., Feb. 4, 2013 [NASDAQ:  MCHP] — Microchip Technology Inc., a leading provider of microcontroller, mixed-signal, analog and Flash-IP solutions, today announced an expansion of its SPI Flash memory portfolio, with the introduction of the SST25PF020B, SST25PF040B and SST25PF080B devices.  The SST25PF020B, SST25PF040B and SST25PF080B offer 2-, 4- and 8-Mbit of memory and are manufactured with Microchip’s high-performance SuperFlash® technology, a split-gate, NOR Flash design with thick-oxide tunneling injector for superior quality and reliability.

With their extended operating voltage range from 2.3 to 3.6V, extremely low power consumption, small-footprint packaging, and fixed super-fast program and erase times, these SPI Flash memory devices excel in a variety of applications.  The memory is partitioned into uniform 4 Kbyte sectors, and 32 and 64 Kbyte blocks, offering flexible erase capabilities and seamless partitioning for program and data code in the same memory block.  All three devices enable designers to reduce their overall product design cycles and total system costs while improving product performance.  The extended voltage range provides designers with a wider set of options on the power-supply voltage for their chipsets and board designs, and reduces overall power consumption, making these memory devices especially well suited for battery-operated accessories, sensors and equipment.

The SST25PF020B, SST25PF040B and SST25PF080B SPI Flash devices offer flexible erase and program performance, including erasing sectors and blocks as fast as 18 ms, erasing the entire Flash memory chip in 35 ms, and a word-programming time of 7 µs using Auto Address Increment (AAI).  The devices also offer superior reliability of 100,000 endurance cycles, typical, and greater than 100 years of data retention.  The active read current of these devices is only 10 mA, typical, at 80 MHz, and standby current is only 10 µA, typical.

All three devices excel in a broad range of applications, including those in the consumer- electronics and industrial markets.  Examples of ideal end applications include smart meters, wireless products for sports/fitness/health monitoring, digital radios, low-power Wi-Fi® products, GPS, and a wide array of battery-operated products.  Additionally, these SPI Flash memory devices are well suited for use in medical applications, such as glucose meters, hearing aids and wireless sensors.

“Newer designs requiring greater mobility, along with more compact form factors, are driving lower-power and extended-voltage requirements,” said Randy Drwinga, vice president of Microchip’s SuperFlash Memory Division.  “With their extended voltage, smaller footprint and low power consumption, this SST25PFXXXB SPI Flash family provides designers with even simpler, more economical and more innovative memory solutions for their embedded designs.

Pricing & Availability

The SST25PF020B starts at $0.53 each, in 8-lead 150 mil SOIC, 8-contact USON (3x2 mm), or 8-contact WSON (6x5 mm) packages, in 10,000-unit quantities.  The SST25PF040B starts at $0.66 each, in 8-lead 150 mil SOIC, 8-lead 200 mil SOIC, or 8-contact WSON (6x5 mm) packages, in 10,000-unit quantities.  The SST25PF080B starts at $0.81 each, in 8-lead 150 mil SOIC, 8-lead 200 mil SOIC, or 8-contact WSON (6x5 mm) packages, in 10,000 unit-quantities.

For additional information, contact any Microchip sales representative or authorized worldwide distributor, or visit Microchip’s Web site at http://www.microchip.com/get/4GJ2.  To purchase products mentioned in this press release, go to microchipDIRECT or contact one of Microchip’s authorized distribution partners.