May 8, 2012 Nuremberg, Germany - May 8, 2012 - Today at the PCIM Europe 2012 trade show, Infineon Technologies (FSE: IFX / OTCQX: IFNNY) introduced the new CoolSiC™ 1200V SiC JFET family, which strengthens Infineon’s market leadership in the SiC (Silicon Carbide) product segment. The revolutionary new product line takes advantage of more than a decade of experience in SiC technology development as well as high quality, high volume production.
“Infineon has a strong track record in launching break-through technologies aimed at markets requiring highly efficient power management. CoolSiC™ is again a revolutionary, highly innovative technology specifically designed for reaching new levels of performance in solar inverters,” said Jan-Willem Reynaerts, Product Segment Head of High Voltage Power Conversion at Infineon Technologies. “With Infineon’s new SiC JFET technology we enable our customers to further shape the future of climate saving solutions.”
The new CoolSiC™ 1200V SiC JFETs have dramatically lower switching losses compared to IGBTs, which allow higher switching frequencies to be used without sacrificing overall system efficiency. This enables the use of much smaller passive components, which result in smaller overall solution size, lower weight and reduced system cost. Alternatively, a higher output power solution can be realized within the same inverter housing.
In order to ensure that the normally-on JFET technology is safe and easy to use, Infineon has developed a concept which is called Direct Drive Technology. In this concept, the JFET is combined with an external Low Voltage MOSFET and a dedicated Driver IC which ensures safe system start-up conditions as well as fast and controlled switching.
The CoolSiC™ JFET features a monolithically integrated body diode that has a switching performance comparable to an external SiC Schottky barrier diode. This combination offers the utmost in efficiency, reliability, safety and ease of use.
Availability and Pricing
Samples of the CoolSiC™ JFET products as well as the Driver ICs are available in the second quarter of 2012. First OEM ramp-ups are expected in the first half of 2013. Pricing for IJW120R100T1 (100mOhm) will be US$ 24.90 (€ 18.44) per piece (1,000 pieces quantity).
Further information on Infineon’s new CoolSiC™ 1200V SiC JFET family is available at www.infineon.com/coolsic
Infineon Technologies is presenting the new CoolSiC™ 1200V SiC JFET products at the PCIM Europe 2012 (May 8-10) in Nuremberg, Germany, in Hall 12 at Booth 404.
Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2011 fiscal year (ending September 30), the company reported sales of Euro 4.0 billion with close to 26,000 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY). Further information is available at www.infineon.com.